DocumentCode
3346348
Title
Physical properties of HWCVD microcrystalline silicon thin films
Author
Moutinho, H.R. ; Romero, M.J. ; Jiang, C.-S. ; Xu, Y. ; Nelson, B.P. ; Jones, K.M. ; Mahan, A.H. ; Al-Jassim, M.M.
Author_Institution
Nat. Renewable Energy Lab., Golden, CO, USA
fYear
2002
fDate
19-24 May 2002
Firstpage
1250
Lastpage
1253
Abstract
Microcrystalline silicon films were grown with different thicknesses and different hydrogen dilution ratios on glass and Si substrates. Some films were deposited with a seed layer, whereas others were deposited directly on the substrate. We used atomic force microscopy, scanning electron microscopy, and X-ray diffraction to study the morphology and crystalline structure of the samples. We did not find a significant influence of the different substrates on the morphology or crystalline structure. The presence of the seed layer enhanced the crystallization process, decreasing the amount of amorphous layer present in the films. The microstructure of most films was formed by grains, with a subgrain structure. Films grown with low values of dilution ratio had (220) texture and elongated grains, whereas films deposited with high values of dilution ratio were randomly oriented and had an irregular shape.
Keywords
CVD coatings; X-ray diffraction; atomic force microscopy; chemical vapour deposition; crystal microstructure; elemental semiconductors; scanning electron microscopy; semiconductor growth; semiconductor thin films; silicon; HWCVD microcrystalline silicon thin films; Si; Si substrates; X-ray diffraction; atomic force microscopy; crystalline structure; dilution ratio; elongated grains; glass substrates; hydrogen dilution ratios; physical properties; scanning electron microscopy; seed layer; subgrain structure; texture; thin-film solar cells; Atomic force microscopy; Crystal microstructure; Crystallization; Glass; Hydrogen; Morphology; Scanning electron microscopy; Semiconductor films; Semiconductor thin films; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
ISSN
1060-8371
Print_ISBN
0-7803-7471-1
Type
conf
DOI
10.1109/PVSC.2002.1190835
Filename
1190835
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