Title :
Deposition of device quality μc-Si:H films by hot-wire CVD for solar cell applications
Author :
Lee, J.C. ; Kang, K.H. ; Kim, S.K. ; Yoon, K.H. ; Song, J. ; Kwon, S.W. ; Lim, K.S. ; Park, I.J.
Author_Institution :
New & Renewable Energy Dept., Korea Inst. of Energy Res., Taejon, South Korea
Abstract :
This paper presents deposition and characterizations of microcrystalline silicon (μc-Si:H) films prepared by hot wire chemical vapor deposition at substrate temperature below 300 degC . The SiH4 concentration [F(SiH4)/(SiH4)+F(H2)] is critical parameter for the formation of Si films with microcrystalline phase. At 6.3% of silane concentration, deposited intrinsic μc-Si:H films show sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type μc-Si:H films deposited by hot-wire CVD also shows good electrical properties by varying the rate of B2H6 to SiH4 gas. The solar cells with structure of Al/nip μc-Si:H/TCO/glass was fabricated with single chamber hot-wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research.
Keywords :
CVD coatings; chemical vapour deposition; dark conductivity; elemental semiconductors; hydrogen; semiconductor device measurement; semiconductor growth; semiconductor thin films; silicon; solar cells; 300 degC; Al; B2H6; Si:H; SiH4; SiH4 concentration; dark conductivity; deposition; device quality μc-Si:H films; hot-wire CVD; microcrystalline phase; photo sensitivity; solar cell applications; solar efficiency; Chemical vapor deposition; Conductive films; Conductivity; Glass; Photovoltaic cells; Semiconductor films; Silicon; Substrates; Temperature; Wire;
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
Print_ISBN :
0-7803-7471-1
DOI :
10.1109/PVSC.2002.1190837
