Deposition of device quality μc-Si:H films by hot-wire CVD for solar cell applications

Author

Lee, J.C. ; Kang, K.H. ; Kim, S.K. ; Yoon, K.H. ; Song, J. ; Kwon, S.W. ; Lim, K.S. ; Park, I.J.

Author_Institution

New & Renewable Energy Dept., Korea Inst. of Energy Res., Taejon, South Korea

fYear

2002

fDate

19-24 May 2002

Firstpage

1258

Lastpage

1261

Abstract

This paper presents deposition and characterizations of microcrystalline silicon (μc-Si:H) films prepared by hot wire chemical vapor deposition at substrate temperature below 300 degC . The SiH₄ concentration [F(SiH₄)/(SiH₄)+F(H₂)] is critical parameter for the formation of Si films with microcrystalline phase. At 6.3% of silane concentration, deposited intrinsic μc-Si:H films show sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type μc-Si:H films deposited by hot-wire CVD also shows good electrical properties by varying the rate of B₂H₆ to SiH₄ gas. The solar cells with structure of Al/nip μc-Si:H/TCO/glass was fabricated with single chamber hot-wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research.

Keywords

CVD coatings; chemical vapour deposition; dark conductivity; elemental semiconductors; hydrogen; semiconductor device measurement; semiconductor growth; semiconductor thin films; silicon; solar cells; 300 degC; Al; B₂H₆; Si:H; SiH₄; SiH₄ concentration; dark conductivity; deposition; device quality μc-Si:H films; hot-wire CVD; microcrystalline phase; photo sensitivity; solar cell applications; solar efficiency; Chemical vapor deposition; Conductive films; Conductivity; Glass; Photovoltaic cells; Semiconductor films; Silicon; Substrates; Temperature; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE

ISSN

1060-8371

Print_ISBN

0-7803-7471-1

Type

conf

DOI

10.1109/PVSC.2002.1190837

Filename

1190837