Title :
Thin film poly-Si solar cells with film thickness of 10 microns fabricated by direct deposition using APCVD method
Author :
Ishikawa, Y. ; Nishioka, K. ; Yamamoto, Y. ; Uraoka, Y. ; Fuyuki, T.
Author_Institution :
Graduate Sch. of Mater. Sci., Nara Inst. of Sci. & Technol., Japan
Abstract :
Thin film poly-Si solar cell grown by atmospheric pressure chemical vapor deposition (APCVD) has been fabricated. In order to realize excellent crystallinity poly-Si thin films, two-step deposition method was carried out. The poly-Si film with very high preferential orientation to (220) was obtained with a film thickness of 10 μm and grain size of 3 μm. Due to high temperature annealing effect, μc-Si phase which existed at grain boundaries was disappeared completely. For fabricated thin film poly-Si solar cells, electrical properties were evaluated. Relatively high Jsc of 16.74 mA/cm2 was obtained. Factors to promote the properties further were discussed. Results obtained in this work suggest the possibility of realization of high performance thin film poly-Si solar cells.
Keywords :
CVD coatings; annealing; electrical conductivity; elemental semiconductors; grain boundaries; grain size; semiconductor growth; semiconductor thin films; silicon; solar cells; texture; 10 micron; 3 mm; APCVD method; Si; atmospheric pressure chemical vapor deposition; crystallinity; direct deposition; electrical properties; film thickness; grain boundaries; grain size; high preferential orientation; high temperature annealing effect; thin film poly-Si solar cells; two-step deposition method; Annealing; Crystallization; Grain boundaries; Grain size; Materials science and technology; Photovoltaic cells; Semiconductor films; Sputtering; Temperature; Transistors;
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
Print_ISBN :
0-7803-7471-1
DOI :
10.1109/PVSC.2002.1190846
