DocumentCode :
3346611
Title :
Effects of reflow on the microstructure and whisker growth propensity of Sn finish
Author :
Su, Peng ; Ding, Min ; Chopin, Sheila
Author_Institution :
Freescale Semicond., Final Manuf. Technol. Center, Austin, TX, USA
fYear :
2005
fDate :
31 May-3 June 2005
Firstpage :
434
Abstract :
The initiative of removing Pb from materials sets within the microelectronics industry has created many challenges for research and development. One of the issues is to replace the Pb-containing finish with a Pb-free finish for leaded packages. Pure Sn and alloys with high Sn content have been the leading choices for many manufacturers. These finishes, however, have the tendency to spontaneously grow whiskers on the surface, which is considered by some to be a potential reliability concern as the whiskers can continuously grow and may cause shorting between leads. In this study, leaded components with as-plated Sn finish and reflowed Sn finish are subjected to several Sn whisker acceleration tests including air-to-air thermal cycling and temperature/humidity storage. The results indicate that the whisker growth propensity on the two different finishes is rather different. Microstructure analysis of the Sn finish is also performed with scanning electron microscopy (SEM), X-ray diffraction (XRD), and electron backscatter diffraction (EBSD). Significant microstructure differences are observed between the as-plated and the reflowed Sn finish including grain size, grain orientation, and intermetallic compound (IMC) thickness. As Sn whisker growth is mostly a stress related phenomenon, these findings of microstructure change are used to interpret the process of stress buildup and relief in both as-plated and reflowed Sn. Additionally, at room temperature Sn has a very anisotropic lattice (body centered tetragonal) and this property contributes greatly to the stress concentration in the Sn finish. The implication of this property on Sn whisker growth is also discussed.
Keywords :
X-ray diffraction; crystal microstructure; electron backscattering; electronics packaging; lead; reflow soldering; scanning electron microscopy; thermal stresses; tin alloys; whiskers (crystal); Pb; Pb-containing finish; Pb-free finish; Sn; Sn alloys; Sn whisker acceleration test; X-ray diffraction; anisotropic lattice; electron backscatter diffraction; grain orientation; grain size; humidity storage; intermetallic compound thickness; microelectronics industry; microstructure analysis; scanning electron microscopy; thermal cycling; whisker growth; Lead; Manufacturing industries; Microelectronics; Microstructure; Research and development; Scanning electron microscopy; Stress; Temperature; Tin; X-ray diffraction;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference, 2005. Proceedings. 55th
ISSN :
0569-5503
Print_ISBN :
0-7803-8907-7
Type :
conf
DOI :
10.1109/ECTC.2005.1441301
Filename :
1441301
Link To Document :
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