DocumentCode :
3346647
Title :
Comparison of a Cu UBM versus a Co UBM for Sn Flip-Chip Bumps
Author :
Labie, Riet ; Ratchev, Petar ; Beyne, Eric
fYear :
2005
fDate :
May 31 2005-June 3 2005
Firstpage :
449
Lastpage :
451
Keywords :
Electrical resistance measurement; Electrons; Failure analysis; Fatigue; Flip chip; Intermetallic; Semiconductor device measurement; Testing; Thermal stresses; Tin;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference, 2005. Proceedings. 55th
Conference_Location :
Lake Buena Vista, FL
ISSN :
0569-5503
Print_ISBN :
0-7803-8907-7
Type :
conf
DOI :
10.1109/ECTC.2005.1441303
Filename :
1441303
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3346647
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