Title :
Grain growth of polycrystalline Si thin film for solar cells and its effect on crystal properties
Author :
Ujihara, Toru ; Kanda, Eiji ; Fujiwara, Kozo ; Sazaki, Gen ; Usami, Noritaka ; Murakami, Yoshihiro ; Kitahara, Kuninori ; Nakajima, Kazuo
Author_Institution :
Inst. for Mater. Res., Tohoku Univ., Sendai, Japan
Abstract :
In this study, in order to inquire into the principle of the fabrication of the poly-Si film via the grain growth process, we clarified the grain growth mechanism of the thin film for the solar cell by investigating temporal change of the grain size distribution. Moreover, this process was explained by a theoretical model taking two- and three-dimensional growth modes into account. In addition, the crystal quality was evaluated using Raman spectroscopy. The quality was very high comparing with the film prepared by the laser annealing technique.
Keywords :
CVD coatings; Raman spectra; annealing; elemental semiconductors; grain growth; grain size; semiconductor growth; semiconductor thin films; silicon; solar cells; Raman spectroscopy; Si; crystal properties; crystal quality; grain growth; grain size distribution; growth modes; polycrystalline Si thin film; solar cells; Annealing; Fabrication; Grain size; Laser modes; Laser theory; Photovoltaic cells; Raman scattering; Semiconductor thin films; Spectroscopy; Transistors;
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
Print_ISBN :
0-7803-7471-1
DOI :
10.1109/PVSC.2002.1190857
