DocumentCode :
3346859
Title :
Degradation analysis of weathered crystalline-silicon PV modules
Author :
Osterwald, C.R. ; Anderberg, A. ; Rummel, S. ; Ottoson, L.
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO, USA
fYear :
2002
fDate :
19-24 May 2002
Firstpage :
1392
Lastpage :
1395
Abstract :
We present an analysis of the results of a solar weathering program that found a linear relationship between maximum power degradation and the total UV exposure dose for four different types of commercial crystalline Si modules. The average degradation rate for the four modules types was 0.71 % per year. The analysis showed that losses of short-circuit current were responsible for the maximum power degradation. Judging by the appearance of the nondegraded control modules, it is very doubtful that the short-circuit current losses were caused by encapsulation browning or obscuration. When we compared the quantum efficiency of a single cell in a degraded module to one from an unexposed control module, it appears that most of the degradation has occurred in the 800-1100 nm wavelength region, and not the short wavelength region.
Keywords :
elemental semiconductors; encapsulation; environmental degradation; short-circuit currents; silicon; solar cell arrays; ultraviolet radiation effects; 800 to 1100 nm; Si; Si photovoltaic cells; UV exposure dose; crystalline Si modules; degradation analysis; encapsulation browning; encapsulation obscuration; maximum power degradation; solar weathering; Acceleration; Crystallization; Degradation; Encapsulation; Laboratories; Life estimation; Materials testing; Open area test sites; Real time systems; Renewable energy resources;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
ISSN :
1060-8371
Print_ISBN :
0-7803-7471-1
Type :
conf
DOI :
10.1109/PVSC.2002.1190869
Filename :
1190869
Link To Document :
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