Title :
Growth of InGaN quantum wells and InGaN/GaN quantum well LEDs by MOCVD
Author :
Keller, Stacia ; Mishra, Umesh K. ; DenBaars, Steven P.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
InGaN quantum wells (QWs) and InGaN/GaN LED structures were grown by atmospheric pressure MOCVD on c-plane sapphire using the precursors trimethylgallium (TMGa), trimethylindium (TMIn), trimethylaluminum (TMAl) and ammonia. Si/sub 2/H/sub 6/ and cyclopentadienylmagnesium (Cp/sub 2/Mg) were used as n- and p-type dopants, respectively. GaN growth was performed at 1080/spl deg/C, the InGaN layers were deposited at temperatures between 700 and 830/spl deg/C. InGaN QWs with an indium content up to 25 % were implemented in double heterostructure LEDs. The devices showed blue luminescence visible in bright room light. The current-voltage characteristics of the double heterostructure LEDs exhibited a forward voltage of 3.6 V at 20 mA.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; photoluminescence; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; 1080 C; 20 mA; 3.6 V; 700 to 830 C; Al/sub 2/O/sub 3/; InGaN quantum wells; InGaN-GaN; InGaN/GaN quantum well LEDs; MOCVD growth; NH/sub 3/; Si/sub 2/H/sub 6/; atmospheric pressure MOCVD; blue luminescence; c-plane sapphire; current-voltage characteristics; cyclopentadienylmagnesium; double heterostructure LEDs; forward voltage; n-type dopant; p-type dopant; trimethylaluminum; trimethylgallium; trimethylindium; Charge carrier lifetime; Gallium nitride; Indium; Light emitting diodes; Luminescence; MOCVD; Quantum computing; Temperature; Voltage;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-3160-5
DOI :
10.1109/LEOS.1996.565225
