DocumentCode :
3347251
Title :
Ultrafast dephasing of continuum transitions in GaAs and AlGaAs
Author :
Arlt, S. ; Siegner, U. ; Kunde, J. ; Morier-Genoud, F. ; Keller, U.
Author_Institution :
Inst. of Quantum Electron., Swiss Fed. Inst. of Technol., Zurich, Switzerland
fYear :
1992
fDate :
23-28 May 1992
Firstpage :
92
Abstract :
Summary form only given. We performed a comprehensive four-wave-mixing (FWM) study of the optical dephasing in bulk GaAs and AlGaAs with broadband 16-fs laser pulses. In contrast to previous work, spectral resolution has allowed us to unambiguously relate the decay of the coherent emission to either continuum or excitonic transitions. We have extended earlier measurements of continuum dephasing to one order of magnitude lower carrier densities. We find much shorter dephasing times and a much weaker density dependence of the dephasing than expected from the extrapolation of the high-density results. Our data indicate that a quantum kinetics model for both Coulomb and LO-phonon scattering is required to describe continuum dephasing on the 10-fs time scale at lower densities.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; multiwave mixing; 16 fs; AlGaAs; Coulomb scattering; GaAs; LO phonon scattering; broadband excitation; carrier density; coherent emission; continuum transition; excitonic transition; four-wave mixing; laser pulse; quantum kinetics model; ultrafast optical dephasing; Charge carrier density; Density measurement; Extrapolation; Gallium arsenide; Kinetic theory; Laser transitions; Optical pulses; Optical scattering; Stimulated emission; Ultrafast optics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-576-X
Type :
conf
DOI :
10.1109/QELS.1999.807348
Filename :
807348
Link To Document :
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