Title :
Genetic Algorithm and Semiconductor Device Model Parameter Extraction
Author :
Fang Feng-bo ; Wu Tao
Author_Institution :
Dept. of Inf. Technol., Jingzhou Inst. of Technol., Jingzhou, China
Abstract :
In this paper, a novel method based on hybrid genetic algorithm (GA) was developed to extract parameters of analytical or part-analytical models. It needn´t complex computation compared with conventional methods or other compound genetic algorithm. With a simple input file and opening model codes, it was easy to be modified for other models. Using this method, parameters of BSIMPD MOSFET threshold voltage were extracted, the simulation result with this method agrees well with the experimental result.
Keywords :
MOSFET; genetic algorithms; semiconductor device models; BSIMPD MOSFET threshold voltage; GA; hybrid genetic algorithm; model codes; parameter extraction; part-analytical models; semiconductor device modeling; Data mining; Electronic mail; Genetic algorithms; Genetic mutations; Hybrid power systems; Information technology; Microelectronics; Optimization methods; Parameter extraction; Semiconductor device modeling; Genetic Algorithms; MOSFET; Model; Parameter Extraction;
Conference_Titel :
Genetic and Evolutionary Computing, 2009. WGEC '09. 3rd International Conference on
Conference_Location :
Guilin
Print_ISBN :
978-0-7695-3899-0
DOI :
10.1109/WGEC.2009.92
