DocumentCode
3347810
Title
Genetic Algorithm and Semiconductor Device Model Parameter Extraction
Author
Fang Feng-bo ; Wu Tao
Author_Institution
Dept. of Inf. Technol., Jingzhou Inst. of Technol., Jingzhou, China
fYear
2009
fDate
14-17 Oct. 2009
Firstpage
97
Lastpage
100
Abstract
In this paper, a novel method based on hybrid genetic algorithm (GA) was developed to extract parameters of analytical or part-analytical models. It needn´t complex computation compared with conventional methods or other compound genetic algorithm. With a simple input file and opening model codes, it was easy to be modified for other models. Using this method, parameters of BSIMPD MOSFET threshold voltage were extracted, the simulation result with this method agrees well with the experimental result.
Keywords
MOSFET; genetic algorithms; semiconductor device models; BSIMPD MOSFET threshold voltage; GA; hybrid genetic algorithm; model codes; parameter extraction; part-analytical models; semiconductor device modeling; Data mining; Electronic mail; Genetic algorithms; Genetic mutations; Hybrid power systems; Information technology; Microelectronics; Optimization methods; Parameter extraction; Semiconductor device modeling; Genetic Algorithms; MOSFET; Model; Parameter Extraction;
fLanguage
English
Publisher
ieee
Conference_Titel
Genetic and Evolutionary Computing, 2009. WGEC '09. 3rd International Conference on
Conference_Location
Guilin
Print_ISBN
978-0-7695-3899-0
Type
conf
DOI
10.1109/WGEC.2009.92
Filename
5402939
Link To Document