Near-field second harmonic imaging for lead zirconate titanate piezoceramic

Author

Smolynianov, I.I. ; Lee, C.H. ; Davis, C.C.

Author_Institution

Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA

fYear

1992

fDate

23-28 May 1992

Firstpage

117

Abstract

Summary form only given. The ability of ferroelectric materials such as Pb(Zr/sub x/Ti/sub 1-x/)O/sub 3/ (PZT) piezoceramics to switch from one stable polarization state to another forms the basis of a new thin film technology for data storage. Thin PZT films are used in prototype nonvolatile ferroelectric random access memory (NVFRAM) and dynamic random-access memory (DRAM) devices. We report second harmonic imaging of the surface of a PZT ceramic obtained in a near-field microscopy setup using a Ti:sapphire laser system consisting of an oscillator and a regenerative amplifier operating at 810 nm.

Keywords

lead compounds; light scattering; optical films; optical harmonic generation; optical images; optical storage; piezoceramics; 810 nm; DRAM devices; PZT; PZT piezoceramics; Pb(Zr/sub x/Ti/sub 1-x/)O/sub 3/; PbZrO3TiO3; Ti:sapphire laser system; data storage; dynamic random-access memo; ferroelectric materials; lead zirconate titanate piezoceramic; near-field microscopy setup; near-field second harmonic imaging; optical storage; oscillator; prototype nonvolatile ferroelectric random access memory; regenerative amplifier; second harmonic imaging; stable polarization state switching; thin film technology; Ferroelectric films; Ferroelectric materials; Lead; Piezoelectric materials; Polarization; Prototypes; Random access memory; Switches; Titanium compounds; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-576-X

Type

conf

DOI

10.1109/QELS.1999.807387

Filename

807387