DocumentCode :
3348036
Title :
Simulations and electrical characterization of Double-side Double Type Column 3D detectors
Author :
Cristofoli, A. ; Costa, A. Dalla ; Boscardin, M. ; Cindro, V. ; Betta, G. F Dalla ; Driussi, F. ; Giacomini, G. ; Giordani, M.P. ; Palestri, P. ; Povoli, M. ; Ronchin, S. ; Vianello, E. ; Selmi, L.
Author_Institution :
DIEGM, Univ. di Udine, Udine, Italy
fYear :
2011
fDate :
23-29 Oct. 2011
Firstpage :
518
Lastpage :
522
Abstract :
We report here the results of the electrical characterization of 3D-DDTC diode samples in virgin conditions and after exposition to reactor´s neutrons with a fluence of 1015 neq · cm-2. CV and IV measurements before irradiation have been employed to calibrate a commercial TCAD simulation tool, which has been then used to reproduce the effects of radiation damage in the detector. Simulation results are compared to post irradiation measurements. A systematic study of the effects of the positive oxide charge on the breakdown behaviour reveals a non-monotonic trend which causes the VBR to remain almost unchanged compared to measured pre-irradiation values.
Keywords :
electrodes; position sensitive particle detectors; silicon radiation detectors; technology CAD (electronics); 3D-DDTC diode; CV-IV measurement; breakdown behaviour; commercial TCAD simulation tool; double-side double type column 3D detectors; electrical characterization; neutron reactor; non-monotonic trend; positive oxide charge; radiation damage effect; silicon particle detectors; Aluminum; Analytical models; Detectors; Electrodes; Implants; Junctions; Simulation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2011 IEEE
Conference_Location :
Valencia
ISSN :
1082-3654
Print_ISBN :
978-1-4673-0118-3
Type :
conf
DOI :
10.1109/NSSMIC.2011.6154101
Filename :
6154101
Link To Document :
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