Simulations and electrical characterization of Double-side Double Type Column 3D detectors

Author

Cristofoli, A. ; Costa, A. Dalla ; Boscardin, M. ; Cindro, V. ; Betta, G. F Dalla ; Driussi, F. ; Giacomini, G. ; Giordani, M.P. ; Palestri, P. ; Povoli, M. ; Ronchin, S. ; Vianello, E. ; Selmi, L.

Author_Institution

DIEGM, Univ. di Udine, Udine, Italy

fYear

2011

fDate

23-29 Oct. 2011

Firstpage

518

Lastpage

522

Abstract

We report here the results of the electrical characterization of 3D-DDTC diode samples in virgin conditions and after exposition to reactor´s neutrons with a fluence of 10¹⁵ neq · cm^-2. CV and IV measurements before irradiation have been employed to calibrate a commercial TCAD simulation tool, which has been then used to reproduce the effects of radiation damage in the detector. Simulation results are compared to post irradiation measurements. A systematic study of the effects of the positive oxide charge on the breakdown behaviour reveals a non-monotonic trend which causes the V_BR to remain almost unchanged compared to measured pre-irradiation values.

Keywords

electrodes; position sensitive particle detectors; silicon radiation detectors; technology CAD (electronics); 3D-DDTC diode; CV-IV measurement; breakdown behaviour; commercial TCAD simulation tool; double-side double type column 3D detectors; electrical characterization; neutron reactor; non-monotonic trend; positive oxide charge; radiation damage effect; silicon particle detectors; Aluminum; Analytical models; Detectors; Electrodes; Implants; Junctions; Simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2011 IEEE

Conference_Location

Valencia

ISSN

1082-3654

Print_ISBN

978-1-4673-0118-3

Type

conf

DOI

10.1109/NSSMIC.2011.6154101

Filename

6154101