Title :
The performance of a fully-monitored, double-junction a-Si grid-connected BIPV system after four years of continuous operation in Brazil
Author :
Ruther, R. ; Dacoregio, M.M. ; Montenegro, A.A. ; Knob, P.
Abstract :
Thin-film amorphous silicon (a-Si) is a good choice of PV technology for operation in warm and sunny climates. A small temperature coefficient of power and a noticeable thermal annealing recovery effect of the light-induced degradation under high operating temperatures, render a-Si devices good performers in warm climate, low-latitude countries. Since 1997 LABSOLAR is continuously monitoring the performance of a thin-film, grid-connected, building-integrated photovoltaic (BIPV) system in Brazil. The performance ratio of this 2 kWp double-junction a-Si PV installation after more than four years of continuous operation averages over 83% AC and 91% DC. The degree of light-induced degradation is lower than usually reported in the literature for a-Si operating in more temperate climates. This is ascribed to higher operating temperatures over the year at the site, leading to a higher degree of thermal annealing of this BIPV system. Our results demonstrate that new generation multijunction a-Si performs well in BIPV systems in warm and sunny sites.
Keywords :
amorphous semiconductors; annealing; building integrated photovoltaics; elemental semiconductors; p-n junctions; semiconductor thin films; silicon; solar cell arrays; 2 kW; 4 y; Brazil; LABSOLAR; Si; building-integrated photovoltaic system; continuous operation; continuous operation averages; double-junction a-Si grid-connected BIPV system; high operating temperatures; light-induced degradation; low-latitude countries; multijunction a-Si; small temperature coefficient; sunny climates; thermal annealing; thermal annealing recovery effect; thin-film amorphous silicon; warm climate; warm climates; Amorphous silicon; Annealing; Building integrated photovoltaics; Inverters; Laboratories; Monitoring; Semiconductor thin films; Temperature; Thermal degradation; Transistors;
Conference_Titel :
Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE
Print_ISBN :
0-7803-7471-1
DOI :
10.1109/PVSC.2002.1190946