DocumentCode :
3348491
Title :
Smart Three Axis Compliant (STAC) Interconnect: An Ultra-High Density MEMS Based Interconnect for Wafer-Level Ultra-Thin Die
Author :
Arunasalam, Parthiban ; Ackler, Harold D. ; Sammakia, Bahgat G.
Author_Institution :
Dept. of Mech. Eng., State Univ. of New York, Binghamton, NY
fYear :
2005
fDate :
May 31 2005-June 3 2005
Firstpage :
1089
Lastpage :
1093
Abstract :
This paper described a novel smart three axis compliant (STAC) interconnect targeted to revolutionize chip-to-chip and chip-to-board high-density 3D integration for ultra-thin Si dies (les75mum) at the wafer level. The STAC interconnect is a three dimensionally compliant interconnect which allows stacked ultra-thin chips to move or flex freely during operation with negligible stress imposed on the die. The paper showed that these interconnects could accommodate mismatches of board or package coefficient of thermal expansion (CTE) from chip CTE. STAC interconnects were fabricated using MEMS technologies to support super-fine-pitch (ap20mum pitch) interconnection. These interconnects are batch processed and die containing them can be stacked either at the wafer-level or at the die-level
Keywords :
fine-pitch technology; integrated circuit interconnections; integrated circuit packaging; micromechanical devices; wafer-scale integration; MEMS based interconnect; coefficient of thermal expansion; fine pitch interconnection; smart three axis compliant interconnect; wafer level ultra thin die stacking; Integrated circuit interconnections; Integrated circuit packaging; Micromechanical devices; Semiconductor device packaging; Space technology; Stacking; Thermal stresses; Through-silicon vias; Wafer scale integration; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic Components and Technology Conference, 2005. Proceedings. 55th
Conference_Location :
Lake Buena Vista, FL
ISSN :
0569-5503
Print_ISBN :
0-7803-8907-7
Type :
conf
DOI :
10.1109/ECTC.2005.1441407
Filename :
1441407
Link To Document :
بازگشت