• DocumentCode
    3348551
  • Title

    Designing current mirror with Nano wire FET

  • Author

    Mazidi, Ehsan

  • Author_Institution
    Fars Sci. & Res. Branch, Islamic Azad Univ., Shiraz, Iran
  • fYear
    2010
  • fDate
    12-15 Oct. 2010
  • Firstpage
    339
  • Lastpage
    342
  • Abstract
    As Nano technology develops more each day and Nano electronic devices come to realization it is obvious that the next step of development would be Nano circuits. Considering the technology difference between the usual 0.1 μm CMOS and Nano scale transistors it is mandatory to fabricate the whole IC with Nano technology circuits. The need for a current source in almost all of the integrated circuits and the common usage of current mirror creates the necessity to design one with Nano technology. Therefore what we have presented in this paper is the design of a current mirror circuit, which uses Nano transistors instead of the usual CMOS transistors. There are two main types of Nano transistors at present, Nano wire transistors and carbon Nano tube transistors; Nano wire transistors will provide a higher output current than carbon Nano tube transistors and better output impedance; which is why we have chosen Nano wire transistors (NWT) for our purposes. The current mirror we used here is an accurate current mirror source suitable for mixed signal IC applications for its stability and high output impedance.
  • Keywords
    CMOS integrated circuits; carbon nanotubes; current mirrors; field effect transistors; nanoelectronics; nanowires; C; CMOS transistors; carbon nanotube transistors; current mirror circuit; integrated circuits; mixed signal IC; nanocircuits; nanoelectronic devices; nanoscale transistors; nanotechnology; nanotechnology circuits; nanowire FET; nanowire transistors; size 0.1 mum; Accuracy; FETs; Impedance; Mirrors; Nanoscale devices; Wire; Nano transistor; Nano wire FET; current mirror; current source;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology Materials and Devices Conference (NMDC), 2010 IEEE
  • Conference_Location
    Monterey, CA
  • Print_ISBN
    978-1-4244-8896-4
  • Type

    conf

  • DOI
    10.1109/NMDC.2010.5652336
  • Filename
    5652336