• DocumentCode
    3348881
  • Title

    Exploring the limits of low cost, organics-compatible high-k ceramic thin films for embedded decoupling applications

  • Author

    Balaraman, Devarajan ; Raj, P.M. ; Abothu, Robin ; Bhattacharya, S. ; Sacks, Michael ; Lance, Michael ; Meyer, Harry ; Swaminathan, Madhavan ; Tumrnala, R.

  • Author_Institution
    Packaging Res. Center, Georgia Inst. of Technol., Atlanta, GA, USA
  • fYear
    2005
  • fDate
    31 May-3 June 2005
  • Firstpage
    1215
  • Abstract
    This paper presents four organic-compatible thin film processing techniques for embedding capacitors into organic PWBs. Hydrothermal synthesis allows integration of pure nano-grained barium titanate films with capacitance density of about 1 μF/cm2. Sol-gel and RF-sputtering in conjunction with a foil transfer process can be used to integrate a variety of perovskite thin films with the capacitance in the range of 200-400 nF/cm2. Thermal oxidation of titanium foil also emerges as a viable process for integrating capacitance of 100s of nF using a foil transfer process. The dielectric properties of the films synthesized by these techniques as a function of various process parameters are presented. Observed dielectric properties like dielectric constant, leakage current and breakdown strengths have been correlated to structural defects and stoichiometry of the films.
  • Keywords
    dielectric thin films; leakage currents; permittivity; printed circuits; sol-gel processing; sputter deposition; RF sputtering; breakdown strengths; dielectric constant; dielectric thin film properties; embedded decoupling applications; embedding capacitors; film stoichiometry; foil transfer process; high-k ceramic thin films; hydrothermal synthesis; leakage current; nano-grained barium titanate films; organic printed wiring boards; organic-compatible thin film processing techniques; perovskite thin films; process parameters; sol gel; structural defects; thermal oxidation; titanium foil; Barium; Capacitance; Capacitors; Ceramics; Costs; Dielectric thin films; High K dielectric materials; High-K gate dielectrics; Titanium compounds; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference, 2005. Proceedings. 55th
  • ISSN
    0569-5503
  • Print_ISBN
    0-7803-8907-7
  • Type

    conf

  • DOI
    10.1109/ECTC.2005.1441425
  • Filename
    1441425