DocumentCode
3349210
Title
Coherent phonons in doped semiconductors probed by THz radiation
Author
Cho, G.C. ; Han, P.Y. ; Zhang, X.-C.
Author_Institution
Dept. of Phys., Rensselaer Polytech. Inst., Troy, NY, USA
fYear
1992
fDate
23-28 May 1992
Firstpage
166
Lastpage
167
Abstract
Summary form only given. We present the highest radiation frequency, observed by far, emitted by coherent longitudinal optical (LO) phonons in III-V compound semiconductors. The results reveal the bare coherent phonon radiation in coexistence with background collective charge carrier oscillations in doped samples. We discuss differences in probing via THz radiation from the optical experiment scheme like time resolved reflectivity change.
Keywords
high-speed optical techniques; phonons; reflectivity; submillimetre wave measurement; III-V compound semiconductors; THz radiation; background collective charge carrier oscillations; coherent longitudinal optical phonons; coherent phonon radiation; coherent phonons; doped semiconductors; highest radiation frequency; time resolved reflectivity change; Absorption; Acoustic materials; Damping; Delay effects; Frequency; Interference; Laser excitation; Nanocrystals; Phonons; Probes;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-576-X
Type
conf
DOI
10.1109/QELS.1999.807477
Filename
807477
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