Effect of proton implantation on optically excited terahertz radiation from GaAs

Author

Gong-Ru Lin ; Ci-Ling Pan

Author_Institution

Inst. of Electro-Opt. Eng., Tatung Inst. of Technol., Taipei, Taiwan

fYear

1992

fDate

23-28 May 1992

Firstpage

172

Lastpage

173

Abstract

Summary form only given. Optically excited THz radiation from unbiased semiconductor has been employed as an alternative technique for characterizing the surface properties of damaged semiconductors. Shen et al. have studied the THz radiation of nitrogen-implanted GaAs (GaAs:N/sup +/). Carrier dynamics of the LT-GaAs has also been studied via THz spectroscopy. In this work, we report the optically excited THz radiation from proton-bombarded GaAs (GaAs:H/sup +/). The different time-resolved THz fields radiating from GaAs:H/sup +/ and semi-insulating GaAs associated with their correlated mechanisms were primarily compared and elucidated.

Keywords

gallium arsenide; high-speed optical techniques; hydrogen ions; ion implantation; protons; submillimetre wave generation; submillimetre wave spectra; GaAs; GaAs:H/sup +/; GaAs:N; GaAs:N/sup +/; LT-GaAs; THz spectroscopy; carrier dynamics; correlated mechanisms; damaged semiconductors; excited THz radiation; nitrogen-implanted GaAs; optically excited terahertz radiation; proton implantation; proton-bombarded GaAs; semi-insulating GaAs; surface properties; time-resolved THz fields; unbiased semiconductor; Acceleration; Gallium arsenide; Magnetic fields; Optical pulses; Optical pumping; Optical sensors; Optical surface waves; Polarization; Protons; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-576-X

Type

conf

DOI

10.1109/QELS.1999.807484

Filename

807484