Title :
Optical second-harmonic phase spectroscopy of Si(111)-SiO/sub 2/ interface
Author :
Schuhmacher, D. ; Marowsky, G. ; Fedyanin, A.A. ; Aktsipetrov, O.A.
Author_Institution :
Laser-Laboratorium Gottingen, Gottingen, Germany
Abstract :
Summary form only given. We report on the observation of the spectral dependence of the phase of second harmonic (SH) waves generated from Si(111)-SiO/sub 2/ interface with SH photon energies from 3.6 eV to 5 eV. We directly observe that the real part of silicon quadratic susceptibility, contrary to linear susceptibility, does not change the sign while passing through E/sub 2/ resonance. We interpret such a spectral behavior as indicating the strong influence of interband transitions located near E/sub 1/´ critical point.
Keywords :
nonlinear optical susceptibility; optical harmonic generation; semiconductor-insulator boundaries; silicon; silicon compounds; 3.6 to 5 eV; SHG intensity spectrum; Si(111)-SiO/sub 2/ interface; Si-SiO/sub 2/; interband transitions; optical second-harmonic phase spectroscopy; quadratic susceptibility; real part; second harmonic waves; spectral dependence; Mie scattering; Nonlinear optics; Optical harmonic generation; Optical scattering; Optical sensors; Optical surface waves; Optimized production technology; Particle scattering; Spectroscopy; Surface treatment;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-576-X
DOI :
10.1109/QELS.1999.807494
