Optical second-harmonic phase spectroscopy of Si(111)-SiO/sub 2/ interface

Author

Schuhmacher, D. ; Marowsky, G. ; Fedyanin, A.A. ; Aktsipetrov, O.A.

Author_Institution

Laser-Laboratorium Gottingen, Gottingen, Germany

fYear

1992

fDate

23-28 May 1992

Firstpage

179

Lastpage

180

Abstract

Summary form only given. We report on the observation of the spectral dependence of the phase of second harmonic (SH) waves generated from Si(111)-SiO/sub 2/ interface with SH photon energies from 3.6 eV to 5 eV. We directly observe that the real part of silicon quadratic susceptibility, contrary to linear susceptibility, does not change the sign while passing through E/sub 2/ resonance. We interpret such a spectral behavior as indicating the strong influence of interband transitions located near E/sub 1/´ critical point.

Keywords

nonlinear optical susceptibility; optical harmonic generation; semiconductor-insulator boundaries; silicon; silicon compounds; 3.6 to 5 eV; SHG intensity spectrum; Si(111)-SiO/sub 2/ interface; Si-SiO/sub 2/; interband transitions; optical second-harmonic phase spectroscopy; quadratic susceptibility; real part; second harmonic waves; spectral dependence; Mie scattering; Nonlinear optics; Optical harmonic generation; Optical scattering; Optical sensors; Optical surface waves; Optimized production technology; Particle scattering; Spectroscopy; Surface treatment;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-576-X

Type

conf

DOI

10.1109/QELS.1999.807494

Filename

807494