Title :
Electromodulated third harmonic generation: a new window on surface /spl chi//sup (4)/
Author :
Wilson, P.T. ; Kempf, R.W. ; Downer, M.C. ; Aktsipetrov, O.A. ; Mishina, E.D.
Author_Institution :
Dept. of Phys., Texas Univ., Austin, TX, USA
Abstract :
Summary form only given. Recently, amplified femtosecond TkSapphire lasers enabled the observation of fourth harmonic generation (FHG) from crystalline surfaces of noncentrosymmetric (GaAs(001)) and centrosymmetric (Si(OO1)) semiconductors below the damage threshold.
Keywords :
MOS capacitors; electro-optical modulation; elemental semiconductors; nonlinear optical susceptibility; optical harmonic generation; semiconductor-insulator boundaries; silicon; silicon compounds; DC electric field induced higher harmonics; Si(111)/SiO/sub 2/ interface; Si-SiO/sub 2/; Si-SiO/sub 2/-Cr; anisotropic properties; azimuthal sample rotation; electromodulated third harmonic generation; fourth harmonic generation; n-Si(111)/SiO/sub 2//Cr MOS capacitors; surface fourth order susceptibility; surface specific probe; surface symmetry; Anisotropic magnetoresistance; Crystallization; Electric variables measurement; Frequency conversion; MOS capacitors; Rotation measurement; Semiconductor lasers; Surface emitting lasers; Time measurement;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-576-X
DOI :
10.1109/QELS.1999.807497
