Effects of electron-beam lithography on thin gate oxide reliability

Author

Chong, Pei Fen ; Cho, Byung Jin ; Chor, Eng Fong ; Joo, Moon Sig

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore

fYear

2001

fDate

2001

Firstpage

55

Lastpage

58

Abstract

In view of the rapid downscaling of design rules in CMOS technologies, current optical lithography tools are expected to be replaced with shorter wavelength lithography tools in the near future. One of the strong candidates for the next generation lithography tools is electron-beam (e-beam) lithography, in order to achieve the required fine geometry definition. However, e-beam irradiation of MOS structures can induce radiation damage, especially to the thin gate oxide. In this paper, the effects of e-beam lithography on thin gate oxide reliability are studied

Keywords

CMOS integrated circuits; electron beam effects; electron beam lithography; integrated circuit design; integrated circuit reliability; integrated circuit testing; MOS structures; SiO₂-Si; design rule downscaling; e-beam irradiation; e-beam lithography; electron-beam lithography effects; fine geometry definition; lithography tool wavelength; lithography tools; optical lithography tools; radiation damage; thin gate oxide; thin gate oxide reliability; Acceleration; CMOS technology; Current density; Current measurement; Electron traps; Leakage current; Lithography; Stress measurement; Thermal stresses; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2001. IPFA 2001. Proceedings of the 2001 8th International Symposium on the

Print_ISBN

0-7803-6675-1

Type

conf

DOI

10.1109/IPFA.2001.941454

Filename

941454