Bipolar current stressing and electrical recovery of quasi-breakdown in thin gate oxides

Author

Loh, Wei Yip ; Cho, Byung Jin ; Li, Ming Fu

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore

fYear

2001

fDate

2001

Firstpage

59

Lastpage

62

Abstract

The quasi-breakdown mechanism (QB) of thin gate oxides is investigated under bipolar constant current stressing. It was observed that there exist two distinct stages in quasi-breakdown (QB), characterized by their electrical recoverability. In the first or recoverable stage, leakage current after QB could be recovered to the SILC level by applying proper reverse bias. In the second or unrecoverable stage, however, no electrical recovery is observed. Conduction mechanisms at QB were also studied using carrier separation and DCIV techniques

Keywords

CMOS integrated circuits; MOSFET; dielectric thin films; integrated circuit reliability; integrated circuit testing; leakage currents; semiconductor device breakdown; CMOSFETs; DCIV techniques; QB; SILC level recovery; SiO₂-Si; bipolar constant current stressing; bipolar current stressing; carrier separation; conduction mechanisms; electrical recoverability; electrical recovery; leakage current; quasi-breakdown; quasi-breakdown mechanism; quasi-breakdown stages; recoverable stage; reverse bias; thin gate oxides; unrecoverable stage; Annealing; Bipolar transistors; Current measurement; Electric breakdown; Leakage current; Pulse measurements; Stress; Temperature; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2001. IPFA 2001. Proceedings of the 2001 8th International Symposium on the

Print_ISBN

0-7803-6675-1

Type

conf

DOI

10.1109/IPFA.2001.941455

Filename

941455