Title :
A cryogenic ultra-low noise CMOS preamplifier for point-contact HPGe detectors
Author :
Zhu, Xuezhou ; Deng, Zhi ; Li, Yulan ; Liu, Yinong ; Yue, Qian ; Li, Jin
Author_Institution :
Dept. of Eng. Phys., Tsinghua Univ., Beijing, China
Abstract :
A cryogenic ultra-low noise CMOS CSA has been developed for point-contact HPGe detector for CDEX dark matter search experiment. Several design techniques have been adopted including adjustable biasing for low temperature operation, fast reset circuits without increasing parallel noise and an output stage with high capacitive drive capability. A prototype chip has been fabricated in 0.35μm CMOS technology. ENC noise was measured to be 6.5 electrons at low temperature. The energy resolution of 0.59% FWHM for Cs-137 662keV full energy peak was measured with a point-contact HPGe detector, compared to 0.2% FWHM using a JFET-input-transistor CSA. Detailed design and test results will be reported in this paper.
Keywords :
CMOS digital integrated circuits; cryogenics; germanium radiation detectors; high energy physics instrumentation computing; nuclear electronics; semiconductor device noise; 137Cs; CDEX dark matter search experiment; CMOS technology; ENC noise; JFET-input-transistor CSA; adjustable biasing; charge sensitive preamplifier; cryogenic ultralow noise CMOS CSA; cryogenic ultralow noise CMOS preamplifier; electron volt energy 662 keV; fast reset circuit; high performance germanium detector; point-contact HPGe detector; prototype chip; CMOS integrated circuits; CMOS technology; Elementary particle vacuum; Preamplifiers;
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2011 IEEE
Conference_Location :
Valencia
Print_ISBN :
978-1-4673-0118-3
DOI :
10.1109/NSSMIC.2011.6154219
