Effect of transmission line pulsing of interconnects investigated using combined low-frequency noise and resistance measurements

Author

Chu, L.W. ; Chim, W.K. ; Pey, K.L. ; See, A.

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore

fYear

2001

fDate

2001

Firstpage

97

Lastpage

102

Abstract

A novel technique of combining 1/f noise and resistance measurements for characterising electrostatic discharge (ESD) induced voiding damage in aluminium interconnects is reported. The ESD stress was performed using the transmission line pulsing (TLP) technique. Samples of different line widths, with and without an overlying passivation, were studied

Keywords

1/f noise; aluminium; electric resistance; electrostatic discharge; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; integrated circuit modelling; integrated circuit noise; integrated circuit reliability; passivation; transmission lines; voids (solid); Al; ESD induced voiding damage; ESD stress; TLP technique; aluminium interconnects; combined 1/f noise/resistance measurements; combined low-frequency noise/resistance measurements; electrostatic discharge; interconnects; line width; passivation; transmission line pulsing; 1f noise; Artificial intelligence; Electrical resistance measurement; Electrostatic discharge; Integrated circuit interconnections; Low-frequency noise; Noise measurement; Semiconductor device noise; Stress; Transmission lines;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2001. IPFA 2001. Proceedings of the 2001 8th International Symposium on the

Print_ISBN

0-7803-6675-1

Type

conf

DOI

10.1109/IPFA.2001.941463

Filename

941463