Title :
The evolution of nonequilibrium electron distributions in wide semiconductor quantum wells on ultrashort timescales
Author :
Lee, T.S.-C. ; Galbraith, I.
Author_Institution :
Dept. of Phys., Heriot-Watt Univ., Edinburgh, UK
Abstract :
Summary form only given. We present results for the evolution of nonequilibrium electron distributions and intersubband population relaxation times in a GaAs quantum well, for different carrier densities and lattice temperatures, and different fractions of the electron population excited into the upper subband, including cases with a population inversion between the subbands. We compare the relative importance of electron-electron and electron-LO-phonon scattering processes in determining the intersubband population relaxation times.
Keywords :
RPA calculations; dielectric function; electron-phonon interactions; gallium arsenide; population inversion; semiconductor quantum wells; Boltzmann collision integrals; GaAs; dielectric function; electron-LO-phonon scattering; electron-electron scattering; intersubband population relaxation times; nonequilibrium electron distributions; population inversion; random phase approximation; ultrashort timescales; wide semiconductor quantum wells; Absorption; Electrons; Excitons; Four-wave mixing; Nonlinear optics; Optical mixing; Optical pumping; Quantum cascade lasers; Quantum well devices; Spectroscopy;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-576-X
DOI :
10.1109/QELS.1999.807539
