Application of passive voltage contrast and focused ion beam on failure analysis of metal via defect in wafer fabrication

Author

Ang, G.B. ; Hua, Y.N. ; Loh, S.K. ; Yogaspari, Yogaspari ; Redkar, S.

Author_Institution

Chartered Semicond. Mfg Ltd., Singapore

fYear

2001

fDate

2001

Firstpage

107

Lastpage

111

Abstract

A case of the application of passive voltage contrast (PVC) and focused ion beam (FIB) to failure analysis of metal interconnection or via defects in wafer fabrication was studied. We have proposed a simple, efficient and cost-saving identification method of locating the 1st, 2nd, 3rd and higher defective vias in the via chain through FIB-induced PVC and its precise cross-sectioning. Such a technique proves useful as it enables us to understand whether all the defective vias in the via chain exhibit the same failure phenomenon or display any particular failure pattern which will help the failure analysis or process engineers to determine the failure mechanism

Keywords

failure analysis; focused ion beam technology; integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; ion beam effects; FIB; FIB-induced PVC; cross-sectioning; defective vias; failure analysis; failure mechanism; failure pattern; failure phenomenon; focused ion beam; metal interconnection defects; metal via defect; passive voltage contrast; via chain; via defects; wafer fabrication; Circuit testing; Displays; Electric resistance; Electron beams; Fabrication; Failure analysis; Integrated circuit interconnections; Ion beams; Passivation; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2001. IPFA 2001. Proceedings of the 2001 8th International Symposium on the

Print_ISBN

0-7803-6675-1

Type

conf

DOI

10.1109/IPFA.2001.941465

Filename

941465