A rapid evaluation method for degradation activation energy of n-GaAs ohmic contacts with and without TiN diffusion barrier layers

Author

Wan-Rong, Zhang ; Zhi-Guo, Li ; Fu-chen, Mu ; Li-xin, Wang ; Ying-hua, Sun ; Yao-hai, Cheng ; Chen Jian-xin ; Guang-Di, Shen

Author_Institution

Dept. of Electron. Eng., Beijing Polytech. Univ., China

fYear

2001

fDate

2001

Firstpage

134

Lastpage

137

Abstract

A rapid evaluation method, the temperature ramp method, for GaAs MESFET ohmic contacts is proposed. By use of this method, activation energy for ohmic contact degradation can be obtained using less time and a smaller number of samples than traditional methods, and the results are in agreement with those obtained by traditional methods. In accordance with some drawbacks of traditional AuGeNi-Au ohmic contacts, a new ohmic contacts system with TiN diffusion barrier layer is proposed. Experimental results show that the reliability of ohmic contacts with TiN is greatly superior to that of traditional AuGeNi-Au ohmic contacts

Keywords

III-V semiconductors; Schottky gate field effect transistors; chemical interdiffusion; diffusion barriers; gallium arsenide; ohmic contacts; semiconductor device metallisation; semiconductor device reliability; semiconductor device testing; titanium compounds; AuGeNi-Au; AuGeNi-Au ohmic contacts; GaAs; GaAs MESFET ohmic contacts; TiN; TiN diffusion barrier layers; activation energy; degradation activation energy; n-GaAs ohmic contacts; ohmic contact degradation; ohmic contacts; reliability; temperature ramp method; Contact resistance; Degradation; Gallium arsenide; Gold; Integral equations; MESFETs; Ohmic contacts; Stress; Temperature; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2001. IPFA 2001. Proceedings of the 2001 8th International Symposium on the

Print_ISBN

0-7803-6675-1

Type

conf

DOI

10.1109/IPFA.2001.941471

Filename

941471