Title :
InP-based HBT technology for millimeter-wave MMIC VCOs
Author :
Cowles, J. ; Tran, L. ; Wang, H. ; Lin, E. ; Block, T. ; Streit, D. ; Oki, A.
Author_Institution :
Space & Electron. Group, TRW Inc., Redondo Beach, CA, USA
Abstract :
The first fundamental frequency W-band oscillator based on bipolar technology has been demonstrated. Using InP HBT MMIC technology with f/sub t/=70 GHz and f/sub max/=185 GHz, the oscillator operated at 94.3 GHz with a 400 MHz tuning bandwidth delivering P/sub out/=-8 dBm. This technology enables compact, low noise tunable frequency sources targeting future millimeter-wave applications.
Keywords :
III-V semiconductors; bipolar MIMIC; circuit tuning; heterojunction bipolar transistors; indium compounds; millimetre wave generation; millimetre wave oscillators; voltage-controlled oscillators; 185 GHz; 400 MHz; 70 GHz; 94.3 GHz; HBT MMIC technology; HBT technology; III-V semiconductors; InP; W-band; millimeter-wave MMIC VCOs; millimeter-wave applications; tunable frequency sources; tuning bandwidth; Bandwidth; Frequency; Heterojunction bipolar transistors; Indium phosphide; MMICs; Millimeter wave technology; Oscillators; Tuning;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.553567
