DocumentCode
3350396
Title
Significant enhancement of the THz radiation from an InAs (100) clean surface at low-temperature
Author
Ohtake, H. ; Ono, S. ; Izumida, S. ; Liu, Z. ; Kurihara, K. ; Sarukura, N. ; Watanabe, K. ; Matsumoto, Y.
Author_Institution
Inst. for Molecular Sci., Okazaki, Japan
fYear
1992
fDate
23-28 May 1992
Firstpage
211
Lastpage
212
Abstract
Summary form only given. We report the strong enhancement of THz radiation from an InAs irradiated with femtosecond laser pulses after surface cleaning and cooling.
Keywords
III-V semiconductors; high-speed optical techniques; indium compounds; laser beam effects; microwave photonics; submillimetre wave generation; surface cleaning; InAs; InAs [100] clean surface; THz radiation generation; cooling; femtosecond laser pulses; low-temperature; strong enhancement; surface cleaning; Intrusion detection; Optical pulses; Optical scattering; Optical surface waves; Polarization; Surface cleaning; Surface emitting lasers; Surface treatment; Temperature; Ultrafast optics;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-576-X
Type
conf
DOI
10.1109/QELS.1999.807551
Filename
807551
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