DocumentCode :
3350396
Title :
Significant enhancement of the THz radiation from an InAs (100) clean surface at low-temperature
Author :
Ohtake, H. ; Ono, S. ; Izumida, S. ; Liu, Z. ; Kurihara, K. ; Sarukura, N. ; Watanabe, K. ; Matsumoto, Y.
Author_Institution :
Inst. for Molecular Sci., Okazaki, Japan
fYear :
1992
fDate :
23-28 May 1992
Firstpage :
211
Lastpage :
212
Abstract :
Summary form only given. We report the strong enhancement of THz radiation from an InAs irradiated with femtosecond laser pulses after surface cleaning and cooling.
Keywords :
III-V semiconductors; high-speed optical techniques; indium compounds; laser beam effects; microwave photonics; submillimetre wave generation; surface cleaning; InAs; InAs [100] clean surface; THz radiation generation; cooling; femtosecond laser pulses; low-temperature; strong enhancement; surface cleaning; Intrusion detection; Optical pulses; Optical scattering; Optical surface waves; Polarization; Surface cleaning; Surface emitting lasers; Surface treatment; Temperature; Ultrafast optics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-576-X
Type :
conf
DOI :
10.1109/QELS.1999.807551
Filename :
807551
Link To Document :
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