Impact of bandgap and effective mass on the transport characteristics of tunneling FET

Author

Zubair, Ahmad ; Siddiqui, Saima Afroz ; Shoron, Omor Faruk ; Khosru, Quazi D M

Author_Institution

Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh

fYear

2010

fDate

12-15 Oct. 2010

Firstpage

47

Lastpage

51

Abstract

Temperature and length scaling dependence of double gate tunnel FET has been analyzed considering the electric field of junction depletion region. In the ballistic limit I_d has been found to be dominated by effective mass and insulator dielectric constant rather than bandgap. Hence, GaAs channel TFET has identified as higher current device than Si counterpart due to lower effective mass. However, off state leakage current has shown comparatively more temperature dependence than on current in GaAs TFET. Besides, transconductance has found to be positively dependent on temperature for this device.

Keywords

III-V semiconductors; effective mass; energy gap; field effect transistors; gallium arsenide; leakage currents; permittivity; tunnelling; GaAs; ballistic limit; double gate tunneling FET; effective mass; insulator dielectric constant; junction depletion region; leakage current; length scaling dependence; temperature dependence; transconductance; transport characteristics; Electric fields; Gallium arsenide; Logic gates; Photonic band gap; Temperature; Tunneling; band to band tunneling; bandgap; effective mass; high K dielectric; temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference (NMDC), 2010 IEEE

Conference_Location

Monterey, CA

Print_ISBN

978-1-4244-8896-4

Type

conf

DOI

10.1109/NMDC.2010.5652456

Filename

5652456