Title :
Hydrogen-related burn-in in GaAs/AlGaAs HBTs and implications for reliability
Author :
Henderson, T. ; Ley, V. ; Kim, T. ; Moise, T. ; Hill, D.
Author_Institution :
Corp. R&D, Texas Instrum. Inc., Dallas, TX, USA
Abstract :
We report a burn-in effect in carbon-doped GaAs/AlGaAs HBTs that results in an increase in dc current gain. The burn-in is the result of the annihilation of hydrogen-related recombination centers due to electron injection into the base. This burn-in effect needs to be taken into account in long-term bias stress testing of HBTs. Unrealistic values of mean time to failure and activation energy may be calculated otherwise.
Keywords :
III-V semiconductors; aluminium compounds; electron-hole recombination; failure analysis; gallium arsenide; heterojunction bipolar transistors; semiconductor device reliability; semiconductor device testing; GaAs-AlGaAs; HBTs; activation energy; burn-in effect; dc current gain; electron injection; long-term bias stress testing; mean time to failure; recombination center annihilation; reliability; Annealing; Doping; Electrons; Gallium arsenide; Heterojunction bipolar transistors; Hydrogen; Instruments; Occupational stress; Spontaneous emission; Temperature;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.553568
