DocumentCode
3350495
Title
MIM and MIS electret response of laser deposited SrxBa 1-xNb2O6 thin films
Author
Cheng, Hsiu-Fung ; Chiou, Gong-Shing ; Liu, Kou-Shung ; Lin, I-Nan
Author_Institution
Dept. of Phys., Nat. Taiwan Normal Univ., Taipei, Taiwan
fYear
1996
fDate
25-30 Sep 1996
Firstpage
629
Lastpage
634
Abstract
The pulsed laser deposition technique has been applied to synthesize SrxBa1-xNb2O6 (SBN: x=0.5) thin films. The polycrystalline phase of SBN films can be obtained only when the substrate temperature was higher than 680°C. The crystalline texture can be modified when the oxygen pressure was varied. Both metal-insulator-metal (MIM) and metal-insulator-semiconductor (MIS) structures of films possess ferroelectric properties. Diffusive phase-transition characteristics of dielectric constant-temperature properties indicate that the SBN films possess a pyroelectric property. SBN films, therefore, have potential for electret research and application
Keywords
MIM structures; MIS structures; barium compounds; electrets; ferroelectric materials; ferroelectric thin films; ferroelectric transitions; permittivity; pulsed laser deposition; pyroelectricity; strontium compounds; texture; 680 C; MIM electret response; MIS electret response; SBN; SBN films; SrxBa1-xNb2O6; SrBaNb2O6; crystalline texture; dielectric constant; diffusive phase-transition characteristics; ferroelectric properties; laser deposited SrxBa1-xNb2O6 thin films; metal-insulator-metal structure; metal-insulator-semiconductor structure; oxygen pressure; polycrystalline phase; pulsed laser deposition technique; pyroelectric property; substrate temperature; Dielectric substrates; Dielectric thin films; Electrets; Ferroelectric films; Metal-insulator structures; Niobium; Optical pulses; Pulsed laser deposition; Sputtering; Strontium;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrets, 1996. (ISE 9), 9th International Symposium on
Conference_Location
Shanghai
Print_ISBN
0-7803-2695-4
Type
conf
DOI
10.1109/ISE.1996.578181
Filename
578181
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