Title :
Ultrafast carrier trapping in oxygen- and aluminum-implanted GaAs
Author :
Kang, J.U. ; Dietrich, H.B. ; Frankel, M.Y. ; Molnar, B.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
Summary form only given. By using a pump-probe photoreflectance technique, we have measured the free carrier lifetime of O- and O-Al-implanted GaAs as a function of O and Al implant concentration and annealing temperature. We have studied the effects of O and O-Al implantation on the lifetime of semi-insulating (SI) GaAs. We have shown that the O-implanted GaAs exhibits ultrafast carrier lifetimes, and that these results are consistent with the O-doped MOVPE grown samples. We observed faster trapping times as the O impurity concentration is increased, with trapping time is as fast as 200 fs.
Keywords :
III-V semiconductors; MOCVD; aluminium; annealing; carrier lifetime; electron traps; gallium arsenide; high-speed optical techniques; ion implantation; oxygen; vapour phase epitaxial growth; GaAs:O,Al; O impurity concentration; O-Al implantation; O-Al-implanted GaAs; O-doped MOVPE grown samples; O-implanted GaAs; aluminum-implanted GaAs; annealing temperature; faster trapping times; free carrier lifetime; implant concentration; lifetime of semi-insulating (SI); oxygen-implanted GaAs; pump-probe photoreflectance technique; semi-insulating GaAs lifetime; trapping time; ultrafast carrier lifetimes; ultrafast carrier trapping; Electromagnetic scattering; Electromagnetic waveguides; Gallium arsenide; Lattices; Optical microscopy; Optical scattering; Optical waveguides; Photonic band gap; Planar waveguides; Semiconductor materials;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-576-X
DOI :
10.1109/QELS.1999.807560
