Title :
Excitation of intersubband transitions by THz pulses
Author :
Kersting, R. ; Bratschitsch, R. ; Thaller, E. ; Strasser, G. ; Unterrainer, K. ; Heyman, J.N.
Author_Institution :
Inst. for Solid State Electron., Tech. Univ. Wien, Austria
Abstract :
Summary form only given. When intersubband transitions are excited in semiconductor heterostructures, the charge carriers follow the driving field in an oscillatory motion. THz time-domain spectroscopy is an attractive tool to study the polarization following an exciting THz pulse. A time resolution which is shorter than the oscillation time of the driving field enables the observation of the coherent electron motion for the first time. The investigated structures are GaAs/AlGaAs modulation doped parabolic quantum wells.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; light polarisation; semiconductor heterojunctions; semiconductor quantum wells; time resolved spectra; GaAs-AlGaAs; THz pulses; charge carriers; coherent electron motion; driving field; intersubband transitions excitation; modulation doped parabolic quantum wells; oscillatory motion; polarization; semiconductor heterostructures; time resolution; time-domain spectroscopy; Electrons; Epitaxial layers; Frequency; Gallium arsenide; Gratings; Laser excitation; Optical pulse generation; Polarization; Pulse measurements; Resonance;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-576-X
DOI :
10.1109/QELS.1999.807565
