DocumentCode :
3350649
Title :
Oriented growth of ferroelectric thin films in an in situ applied low electric field
Author :
Hu, U.S. ; Liu, Z.G. ; Feng, D.
Author_Institution :
Nat. Lab. of Solid State Microstructures, Nanjing Univ., China
fYear :
1996
fDate :
25-30 Sep 1996
Firstpage :
635
Lastpage :
640
Abstract :
We have theoretically investigated the oriented growth of ferroelectric thin films on substrates without lattice match by applying a low electric field during deposition. Several kinds of electrode geometry were proposed. The growth mechanism was interpreted in accordance with the electrostatic energy of ferroelectrics in electric field and compared with the poling of polycrystalline ceramics. Two criterions were derived to select ferroelectrics suiting low electric field induced oriented growth
Keywords :
ceramics; dielectric polarisation; electric field effects; ferroelectric thin films; vapour deposition; deposition; electrode geometry; electrostatic energy; ferroelectric thin films; growth mechanism; in situ applied low electric field; low electric field induced oriented growth; oriented growth; poling; polycrystalline ceramics; substrates; Electrodes; Electrostatics; Equations; Ferroelectric films; Ferroelectric materials; Iron; Optical waveguides; Pyroelectricity; Substrates; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrets, 1996. (ISE 9), 9th International Symposium on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-2695-4
Type :
conf
DOI :
10.1109/ISE.1996.578182
Filename :
578182
Link To Document :
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