Analysis of floating body effects in thin film SOI MOSFETs using the GIDL current technique

Author

Dunga, Mohan V. ; Kumar, Aatish ; Rao, V. Ramgopal

Author_Institution

Dept. of Electr. Eng., Indian Inst. of Technol., Bombay, India

fYear

2001

fDate

2001

Firstpage

254

Lastpage

257

Abstract

In this paper, we present an analysis of floating body effects in lateral asymmetric channel (LAC) and conventional homogeneously doped channel (uniform) SOI MOSFETs using a novel gate-induced-drain-leakage (GIDL) current technique. The parasitic bipolar current gain β has been experimentally measured for LAC and uniform SOI MOSFETs using the GIDL current technique. The lower parasitic bipolar current gain observed in LAC SOI MOSFETs is explained with the help of 2D device simulations

Keywords

MOSFET; doping profiles; leakage currents; semiconductor device measurement; semiconductor device models; silicon-on-insulator; 2D device simulations; GIDL current technique; LAC SOI MOSFETs; Si-SiO₂; floating body effects; gate-induced-drain-leakage current technique; homogeneously doped channel SOI MOSFETs; lateral asymmetric channel SOI MOSFETs; parasitic bipolar current gain; thin film SOI MOSFETs; uniform SOI MOSFETs; CMOS technology; Current measurement; Gain measurement; Leakage current; Los Angeles Council; Low voltage; MOSFETs; Semiconductor films; Transistors; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2001. IPFA 2001. Proceedings of the 2001 8th International Symposium on the

Print_ISBN

0-7803-6675-1

Type

conf

DOI

10.1109/IPFA.2001.941497

Filename

941497