Title :
Analysis of floating body effects in thin film SOI MOSFETs using the GIDL current technique
Author :
Dunga, Mohan V. ; Kumar, Aatish ; Rao, V. Ramgopal
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol., Bombay, India
Abstract :
In this paper, we present an analysis of floating body effects in lateral asymmetric channel (LAC) and conventional homogeneously doped channel (uniform) SOI MOSFETs using a novel gate-induced-drain-leakage (GIDL) current technique. The parasitic bipolar current gain β has been experimentally measured for LAC and uniform SOI MOSFETs using the GIDL current technique. The lower parasitic bipolar current gain observed in LAC SOI MOSFETs is explained with the help of 2D device simulations
Keywords :
MOSFET; doping profiles; leakage currents; semiconductor device measurement; semiconductor device models; silicon-on-insulator; 2D device simulations; GIDL current technique; LAC SOI MOSFETs; Si-SiO2; floating body effects; gate-induced-drain-leakage current technique; homogeneously doped channel SOI MOSFETs; lateral asymmetric channel SOI MOSFETs; parasitic bipolar current gain; thin film SOI MOSFETs; uniform SOI MOSFETs; CMOS technology; Current measurement; Gain measurement; Leakage current; Los Angeles Council; Low voltage; MOSFETs; Semiconductor films; Transistors; Tunneling;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 2001. IPFA 2001. Proceedings of the 2001 8th International Symposium on the
Print_ISBN :
0-7803-6675-1
DOI :
10.1109/IPFA.2001.941497
