• DocumentCode
    3350952
  • Title

    Investigation of the humidity sensitivity in Fe3O4 thin films using porous ZrO2 ceramics as carriers

  • Author

    Li, XinShan ; Zhang, Jiancheng ; Meng, Zhongyan

  • Author_Institution
    Sch. of Mater. Sci. & Technol., Shanghai Univ., China
  • fYear
    1996
  • fDate
    25-30 Sep 1996
  • Firstpage
    647
  • Lastpage
    649
  • Abstract
    Porous ZrO2 ceramics have been prepared by sol-gel process. The porous ZrO2 ceramics were used as carriers, and the thin films of the typical humidity material Fe3O4 system were deposited on the inner surfaces of the pores via sol-gel technique. The thin films were treated at 250°C for 1 hr. It is found that the resistivity of the sample is decreased by four orders of magnitude when the humidity changes from 0%RH to 100%RH and has a rapid response time, which is about 1 s. The micrographs of the samples were observed by SEM
  • Keywords
    ceramics; electric sensing devices; electrical resistivity; heat treatment; humidity sensors; iron compounds; porous materials; scanning electron microscopy; sintering; sol-gel processing; zirconium compounds; 1 h; 250 C; Fe3O4 thin films; SEM; ZrO2-Fe3O4; humidity sensitivity; inner surfaces; micrographs; porous ZrO2 ceramics; rapid response time; resistivity; sol-gel process; thin films; Atmosphere; Ceramics; Humidity; Polymers; Rough surfaces; Scanning electron microscopy; Surface roughness; Temperature dependence; Temperature distribution; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrets, 1996. (ISE 9), 9th International Symposium on
  • Conference_Location
    Shanghai
  • Print_ISBN
    0-7803-2695-4
  • Type

    conf

  • DOI
    10.1109/ISE.1996.578184
  • Filename
    578184