Title :
A novel fabrication technology for integrating FETs and high-performance diodes, and its application to MMIC VCO
Author :
Jong-Wan Jung ; Young-Se Kwon
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
Abstract :
We demonstrated a new fabrication technology for integrating FETs and high performance diodes, employing a new FET called FECFET. A diode fabricated with FECFET shows a cutoff frequency of >1500 GHz. It is the best result among the diodes integrated with FETs. By this technology, a fabricated FECFET-based MMIC VCO shows a SSB phase noise of -76 dBc/Hz and -112 dBc/Hz at 100 kHz and 1 MHz offset frequency, respectively. These results show that this technology can be extended to the fabrication of other MMICs with diode and FET combinations.
Keywords :
MMIC oscillators; integrated circuit technology; microwave diodes; microwave field effect transistors; voltage-controlled oscillators; 1500 GHz; FECFET; FET integration; MMIC VCO; SSB phase noise; cutoff frequency; fabrication technology; high-performance diode; offset frequency; Cutoff frequency; Diodes; Epitaxial growth; FETs; Fabrication; Gallium arsenide; MMICs; MOCVD; Substrates; Voltage-controlled oscillators;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.553571
