Title :
High temperature MESFET based integrated circuits operating up to 300/spl deg/C
Author :
Wurfl, J. ; Janke, B. ; Nebauer, E. ; Thierbach, S. ; Wolter, P.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin, Germany
Abstract :
A GaAs MESFET technology for the fabrication of devices for reliable operation at high temperatures is presented. The technology is based on highly stable ohmic and Schottky contacts containing WSiN diffusion barriers and is optimized towards minimum temperature induced leakage currents across the substrate or along the semiconductor surface. MESFETs, fabricated by using this technology, have been optimized to match the requirements for continuous operation at high temperatures and have been successfully implemented in high temperature MMICs and operational amplifiers.
Keywords :
III-V semiconductors; MESFET integrated circuits; gallium arsenide; high-temperature techniques; integrated circuit technology; 300 C; GaAs; GaAs MESFET; MMIC; Schottky contact; WSiN; WSiN diffusion barrier; fabrication technology; high temperature operation; integrated circuit; leakage current; ohmic contact; operational amplifier; semiconductor surface; Fabrication; Gallium arsenide; Integrated circuit reliability; Integrated circuit technology; Leakage current; MESFET integrated circuits; MMICs; Schottky barriers; Substrates; Temperature;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.553572
