High temperature MESFET based integrated circuits operating up to 300/spl deg/C

Author

Wurfl, J. ; Janke, B. ; Nebauer, E. ; Thierbach, S. ; Wolter, P.

Author_Institution

Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin, Germany

fYear

1996

fDate

8-11 Dec. 1996

Firstpage

219

Lastpage

222

Abstract

A GaAs MESFET technology for the fabrication of devices for reliable operation at high temperatures is presented. The technology is based on highly stable ohmic and Schottky contacts containing WSiN diffusion barriers and is optimized towards minimum temperature induced leakage currents across the substrate or along the semiconductor surface. MESFETs, fabricated by using this technology, have been optimized to match the requirements for continuous operation at high temperatures and have been successfully implemented in high temperature MMICs and operational amplifiers.

Keywords

III-V semiconductors; MESFET integrated circuits; gallium arsenide; high-temperature techniques; integrated circuit technology; 300 C; GaAs; GaAs MESFET; MMIC; Schottky contact; WSiN; WSiN diffusion barrier; fabrication technology; high temperature operation; integrated circuit; leakage current; ohmic contact; operational amplifier; semiconductor surface; Fabrication; Gallium arsenide; Integrated circuit reliability; Integrated circuit technology; Leakage current; MESFET integrated circuits; MMICs; Schottky barriers; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996. IEDM '96., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-3393-4

Type

conf

DOI

10.1109/IEDM.1996.553572

Filename

553572