Frequency domain interferometric second harmonic spectroscopy of a Si MOS structure

Author

Wilson, P.T. ; Downer, M.C. ; Aktsipetrov, O.A. ; Mishina, E.D.

Author_Institution

Dept. of Phys., Texas Univ., Austin, TX, USA

fYear

1992

fDate

23-28 May 1992

Firstpage

245

Lastpage

246

Abstract

Summary form only given. Because of their high peak intensity, femtosecond laser pulses have been exploited extensively to generate reflected SH radiation with unprecedented efficiency from weakly nonlinear interfaces such as Si(OOl).´ In this paper, we show that the broad bandwidth and coherence of such pulses also enable a powerful technique for measuring the spectrum and phase of the SH radiation across the bandwidth of a 15 fs TkSapphire laser pulse without tuning the laser.

Keywords

MIS structures; elemental semiconductors; high-speed optical techniques; light interferometry; optical harmonic generation; silicon; Si; Si MOS structure; critical point resonance; femtosecond laser pulse; frequency domain interferometric second harmonic spectroscopy; nonlinear interface; Bandwidth; Frequency domain analysis; Laser tuning; Optical pulse generation; Optical pulses; Phase measurement; Power lasers; Pulse measurements; Resonance; Spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-576-X

Type

conf

DOI

10.1109/QELS.1999.807622

Filename

807622