Author :
Agarwal, A.K. ; Augustine, G. ; Balakrishna, V. ; Brandt, C.D. ; Burk, A.A. ; Li-Shu Chen ; Clarke, R.C. ; Esker, P.M. ; Hobgood, H.M. ; Hopkins, R.H. ; Morse, A.W. ; Rowland, L.B. ; Seshadri, S. ; Siergiej, R.R. ; Smith, T.J., Jr. ; Sriram, S.
Author_Institution :
Northrop Grumman Sci. & Technol. Center, Pittsburgh, PA, USA
Abstract :
Silicon Carbide (SiC) is an emerging semiconductor material which has been widely predicted to be superior to both Si and GaAs in the areas of microwave power devices, power electronic switching devices, high temperature analog and digital electronics, non-volatile memories and UV sensors. This paper presents an overview of SiC electronic properties, current status of the bulk and epitaxial material growth, and characteristics of the recently fabricated devices in some of the above device categories. The first application of silicon carbide in high power pulsed amplifiers at UHF and S-Band frequencies is described.
Keywords :
semiconductor materials; silicon compounds; S-band; SiC; UHF; UV sensor; analog electronics; bulk growth; digital electronics; electronic properties; epitaxial growth; high power pulsed amplifier; high temperature electronics; microwave power device; nonvolatile memory; power electronic switching device; semiconductor material; silicon carbide; Gallium arsenide; Microwave devices; Nonvolatile memory; Power electronics; Power semiconductor switches; Pulse amplifiers; Semiconductor materials; Sensor phenomena and characterization; Silicon carbide; Temperature sensors;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.553573
