Fabrication of high-performance voltage inverters based on carbon nanotube field-effect transistors

Author

Maehashi, Kenzo ; Kishimoto, Takaomi ; Ohno, Yasuhide ; Inoue, Koichi ; Matsumoto, Kazuhiko

Author_Institution

Inst. of Sci. & Ind. Res., Osaka Univ., Ibaraki, Japan

fYear

2010

fDate

12-15 Oct. 2010

Firstpage

343

Lastpage

346

Abstract

We demonstrated high-performance complementary voltage inverters based on top-gated carbon nanotube field-effect transistors (CNTFETs) with SiN_x passivation films. The carrier type of CNTFETs was controlled by forming condition of SiN_x passivation films. Complementary voltage inverters comprising p- and n-type CNTFETs were fabricated on the same SiO₂ substrate. The static transfer and noise margin characteristics of the CNTFET based inverters were investigated. It was found that a gain of approximately 24 was achieved and that the device was robust against noise.

Keywords

carbon nanotubes; field effect transistors; invertors; nanotube devices; semiconductor nanotubes; silicon compounds; C-SiN_x; SiO₂; carbon nanotube field-effect transistors; high-performance voltage inverters; noise margin characteristics; passivation films; static transfer characteristics; CNTFETs; Carbon nanotubes; Films; Inverters; Logic gates; Noise; Passivation;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference (NMDC), 2010 IEEE

Conference_Location

Monterey, CA

Print_ISBN

978-1-4244-8896-4

Type

conf

DOI

10.1109/NMDC.2010.5652509

Filename

5652509