Title :
Preparation and properties of soft ferroelectric BaTiO3 thin film by sol-gel process
Author :
Thongrueng, J. ; Nishio, K. ; Tsuchiya, T. ; Nagata, K. ; Masuda, Y.
Author_Institution :
Dept. of Mater. Sci. & Technol., Sci. Univ. of Tokyo, Noda, Japan
Abstract :
Soft ferroelectric BaTiO3 ceramics having a very low coercive field of 40 V/mm were prepared by substituting 9 mol% Hf-Zr for Ti-site of BaTiO3. Accordingly, the soft ferroelectric materials have great potential for applications in ferroelectric thin-film devices due to a relatively low coercive field, which allows easy switching of the ferroelectric domains. In addition, sol-gel-derived soft ferroelectric BaTiO3 thin films were prepared by spin coating. The microstructure and electrical properties of the films were measured on Pt and Pt/Ti/SiO2/Si(100) (hereinafter, "PS") substrates. The room-temperature coercive field, Ec, and remanent polarization, Pr, for the 870-nm-thick soft ferroelectric BaTiO3 thin film prepared on platinized silicon substrate at 700°C were determined to be 25 kV/cm and 7 μC/cm2, respectively. Those for the film, prepared on the Pt substrate at 950°C were 18 kV/cm and 9 μC/cm2, respectively
Keywords :
barium compounds; electric domains; ferroelectric ceramics; ferroelectric switching; ferroelectric thin films; sol-gel processing; spin coating; 700 C; 950 C; Ba(TiHfZr)O3; BaTiO3; Pt substrate; bulk ceramic; coercive field; electrical properties; ferroelectric domain switching; microstructure; platinized silicon substrate; remanent polarization; soft ferroelectric BaTiO3 thin film; sol-gel process; spin coating; Ceramics; Coatings; Electric variables measurement; Ferroelectric films; Ferroelectric materials; Microstructure; Polarization; Substrates; Thin film devices; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 2000. ISAF 2000. Proceedings of the 2000 12th IEEE International Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
0-7803-5940-2
DOI :
10.1109/ISAF.2000.941549
