Investigation of the electrical and the dielectric properties of the new type insulator LB films

Author

Ming, Zhu ; Zong-han, Wu ; Yu-bai, Bak ; Jia-cong, Shen

Author_Institution

Dept. of Phys., Southeast Univ., Nanjing, China

fYear

1996

fDate

25-30 Sep 1996

Firstpage

673

Lastpage

677

Abstract

The electrical and dielectric properties of metal-insulator-semiconductor (MIS) and metal-insulator-metal (MIM) structures of various insulator LB films were investigated. High frequency capacitance-voltage (C-V) measurements of the MIS structure of the LB films showed the accumulation, depletion and inversion regions. The dielectric constants of the new insulator LB films were calculated. In constrast with other LB films, the microgel star-shaped amphiphile (MAS) LB film showed a potential application in electronic devices due to its higher thermal and mechanical stabilities. The breakdown voltage of the MIM structure of the MAS containing only a single monolayer is over 200 V. Results of the variable capacitance made from the new type insulator LB films were also reported

Keywords

Langmuir-Blodgett films; MIM devices; MIM structures; MIS devices; MIS structures; capacitance; dielectric thin films; electric breakdown; insulating thin films; molecular electronics; permittivity; polymer films; thermal stability; MIM structures; MIS structure; accumulation region; breakdown voltage; depletion region; dielectric constants; dielectric properties; electrical properties; electronic device application; high frequency capacitance-voltage measurements; insulator LB films; inversion region; mechanical stability; microgel star-shaped amphiphile LB film; single monolayer; thermal stability; variable capacitance; Artificial intelligence; Conductive films; Dielectric substrates; Dielectrics and electrical insulation; Electrodes; Glass; Metal-insulator structures; Polymer films; Semiconductor films; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrets, 1996. (ISE 9), 9th International Symposium on

Conference_Location

Shanghai

Print_ISBN

0-7803-2695-4

Type

conf

DOI

10.1109/ISE.1996.578189

Filename

578189