DocumentCode
3351640
Title
Semiconductor three-dimensional photonic crystals operating at infrared wavelength region
Author
Noda, S. ; Yamamoto, N.
Author_Institution
Dept. of Electron. Sci. & Eng., Kyoto Univ., Japan
fYear
1992
fDate
23-28 May 1992
Firstpage
269
Lastpage
270
Abstract
Summary form only given. We have developed complete 3D photonic crystals with an asymmetric face-centered cubic (FCC) structure operating in the infrared wavelength region (5/spl sim/10 /spl mu/m) and show that considerable attenuation, as large as 30 dB, has been achieved for the first time.
Keywords
III-V semiconductors; gallium arsenide; infrared spectra; photonic band gap; 5 to 10 mum; GaAs; asymmetric FCC structure; infrared wavelength; infrared wavelength region; semiconductors; three-dimensional photonic crystals; Etching; Gallium arsenide; Lattices; Nonlinear optics; Optical attenuators; Optical frequency conversion; Personal communication networks; Photonic crystals; Stimulated emission; X-ray diffraction;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-576-X
Type
conf
DOI
10.1109/QELS.1999.807657
Filename
807657
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