Current-voltage model in depletion all around operation of InSb nanowire field effect transistor

Author

Jahangir, Ifat ; Jahangir, Shafat ; Khosru, Quazi D M

Author_Institution

Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh

fYear

2010

fDate

12-15 Oct. 2010

Firstpage

42

Lastpage

46

Abstract

In this work, a numerical model of quantum transport in depletion-all-around (DAA) operation of n-InSb nanowire field effect transistor (NWFET) is developed. For incorporating quantum transport, 2D Poisson-Schrödinger equations are solved by finite element method and drain current is calculated by mode-space approach. Effects of gate and drain bias voltages and device dimensions on current-voltage characteristics are observed.

Keywords

Schrodinger equation; field effect transistors; finite element analysis; indium compounds; nanowires; stochastic processes; 2D Poisson-Schrödinger equations; FEM; InSb; current-voltage model; depletion all around operation; device dimensions; drain bias voltages; drain current; finite element method; gate bias voltages; mode-space approach; nanowire field effect transistor; quantum transport; FETs; Films; Indium phosphide; Logic gates; Mathematical model; Numerical models; Wave functions;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference (NMDC), 2010 IEEE

Conference_Location

Monterey, CA

Print_ISBN

978-1-4244-8896-4

Type

conf

DOI

10.1109/NMDC.2010.5652549

Filename

5652549