Title :
Suppression of boron outdiffusion in SiGe HBTs by carbon incorporation
Author :
Lanzerotti, L.D. ; Sturm, J.C. ; Stach, E. ; Hull, R. ; Buyuklimanli, T. ; Magee, C.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
Abstract :
A key problem faced by npn SiGe technology is the outdiffusion of boron from the SiGe base caused by thermal annealing or transient enhanced diffusion. In this paper we investigate the effects of C incorporation in the base on boron diffusion caused by thermal annealing and As emitter implantation. The higher Early voltages of the C transistors compared with that of the no-C transistors indicates that C incorporation in the base dramatically reduces the diffusion of B under postgrowth implantation and annealing procedures.
Keywords :
Ge-Si alloys; annealing; carbon; diffusion; heterojunction bipolar transistors; ion implantation; secondary ion mass spectra; semiconductor materials; As emitter implantation; B outdiffusion suppression; C incorporation; Early voltages; SIMS; SiGe HBTs; SiGe:C; npn SiGe technology; postgrowth implantation; thermal annealing; transient enhanced diffusion; Annealing; Boron; Doping; Germanium silicon alloys; Heterojunction bipolar transistors; Materials science and technology; Photonic band gap; Silicon germanium; Space technology; Voltage;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.553577
