Huge coherent acoustic phonon oscillation induced by piezoelectric field in InGaN/GaN multiple-quantum-wells

Author

Chi-Kuang Sun ; Jian-Chin Liang Liang ; Abare, A. ; Coldren, L. ; DenBaars, S.P.

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

1992

fDate

23-28 May 1992

Firstpage

42461

Lastpage

42462

Abstract

Summary form only given. Due to the coupling between periodic carriers and the corresponding acoustic phonons, femtosecond pulses can initiate coherent-acoustic-phonon-oscillation by screening out the piezoelectric field in InGaN/GaN multiple-quantum-wells. The resulted oscillation causes huge absorption modulation through the quantum-confined-Stark-effect.

Keywords

III-V semiconductors; electroabsorption; gallium compounds; indium compounds; phonons; piezoelectric semiconductors; piezoelectric thin films; quantum confined Stark effect; semiconductor quantum wells; InGaN-GaN; InGaN/GaN multiple-quantum-wells; coupling; femtosecond pulses; huge absorption modulation; huge coherent acoustic phonon oscillation; periodic carriers; piezoelectric field; quantum-confined-Stark-effect; Acoustic pulses; Frequency; Gallium nitride; Laser excitation; Laser modes; Optical modulation; Optical pulses; Phonons; Quantum well devices; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-576-X

Type

conf

DOI

10.1109/QELS.1999.807670

Filename

807670