DocumentCode
3351823
Title
Room temperature lasing action in an InGaN quantum dot laser under optical excitation
Author
Tachibana, K. ; Someya, T. ; Arakawa, Yasuhiko ; Werner, R. ; Forchel, A.
Author_Institution
Inst. of Ind. Sci., Tokyo Univ., Japan
fYear
1992
fDate
23-28 May 1992
Firstpage
42552
Lastpage
42553
Abstract
Summary form only given. We demonstrate the first lasing emission from an In/sub 0.2/Ga/sub 0.8/N quantum dot laser at room temperature. A clear threshold at excitation energy of 6.0 mJ/cm/sup 2/ was observed. Above the threshold, the emission was strongly TE polarized.
Keywords
III-V semiconductors; gallium compounds; indium compounds; light polarisation; optical pumping; photoluminescence; quantum well lasers; semiconductor quantum dots; 293 to 298 K; In/sub 0.2/Ga/sub 0.8/N; In/sub 0.2/Ga/sub 0.8/N quantum dot laser; InGaN quantum dot laser; clear threshold; excitation energy; optical excitation; room temperature lasing action; strongly TE polarized emission; Chemical lasers; Gallium nitride; Laser excitation; Laser modes; Optical pumping; Pump lasers; Quantum dot lasers; Semiconductor lasers; Temperature measurement; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 1999. QELS '99. Technical Digest. Summaries of Papers Presented at the
Conference_Location
Baltimore, MD, USA
Print_ISBN
1-55752-576-X
Type
conf
DOI
10.1109/QELS.1999.807673
Filename
807673
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