• DocumentCode
    3352006
  • Title

    Sol-gel processing SrTiO3 thin films for dynamic random access memory applications

  • Author

    Liu, Qing-feng ; Li, Xin-shan ; Meng, Zhong-yan

  • Author_Institution
    Sch. of Mater. Sci. & Technol., Shanghai Univ., China
  • fYear
    1996
  • fDate
    25-30 Sep 1996
  • Firstpage
    690
  • Lastpage
    694
  • Abstract
    Polycrystalline and crack-free strontium titanate (SrTiO3 ) thin films were deposited on silicon and quartz substrates by the sol-gel technique, using strontium acetate and titanium tetrabutoxide as starting materials. As-deposited thin films were amorphous in structure, the perovskite phase was observed by X-ray diffraction analysis of the thin films heat-treated over 600°C
  • Keywords
    DRAM chips; X-ray diffraction; ferroelectric storage; ferroelectric thin films; heat treatment; sol-gel processing; strontium compounds; 500 to 800 C; Si; Si substrate; SiO2; SrTiO3; SrTiO3 thin films; X-ray diffraction analysis; amorphous structure; dynamic random access memory; ferroelectric perovskite; heat-treatment; perovskite phase; polycrystalline crack-free films; quartz substrate; sol-gel processing; strontium acetate; titanium tetrabutoxide; Amorphous materials; Crystallization; DRAM chips; Optical device fabrication; Scanning electron microscopy; Sputtering; Strontium; Temperature; Titanium; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrets, 1996. (ISE 9), 9th International Symposium on
  • Conference_Location
    Shanghai
  • Print_ISBN
    0-7803-2695-4
  • Type

    conf

  • DOI
    10.1109/ISE.1996.578192
  • Filename
    578192
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3352006